 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE38 (PNP) & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high- speed switching and linear amplifier applications for high-voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features: D Collector-Emitter Sustaining Voltage: NTE38: VCEO(sus) = 350V @ IC = 200mA NTE175: VCEO(sus) = 300V @ IC = 200mA D Second Breakdown Collector Current: NTE38 IS/b = 875mA @ VCE = 40V NTE175 IS/b = 350mA @ VCE = 100V D Usable DC Current Gain to 2.0Adc Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector-Base Voltage, VCB NTE38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE175 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Vdc Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5C/W Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0 NTE38 NTE175 Collector-Emitter Sustaining Voltage VCEX(sus) IC = 200mA, VBE = -1.5V, L = 10mH NTE38 Only VCER(sus) IC = 200mA, IB = 0, RBE = 50 Emitter-Base Breakdown Voltage NTE38 Only Collector Cutoff Current Collector Cutoff Current NTE38 VEBO ICEO ICEV IE = 0.5mA, IC = 0 VCE = 150V, IB = 0 VCE = 250V, VBE(off) = 1.5V VCE = 250V, VBE(off) = 1.5V, TC = +100C VCE = 315V, VBE(off) = 1.5V VCE = 315V, VBE(off) = 1.5V, TC = +100C VCE = 360V, VBE(off) = 1.5V VCE = 360V, VBE(off) = 1.5V, TC = +100C NTE175 ICEX IEBO VCE = 450V, VBE(off) = 1.5V VCE = 300V, VBE(off) = 1.5V, TC = +150C Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain NTE38 NTE175 hFE IC = 1A, VCE = 4V IC = 0.1A, VCE = 10V IC = 1A, VCE = 2V IC = 1A, VCE = 10V Collector-Emitter Saturation Voltage NTE38 NTE175 Base-Emitter Saturation Voltage NTE38 NTE175 Base-Emitter ON Voltage NTE175 Only Dynamic Characteristics Current Gain -Bandwidth Product NTE38 NTE175 Output Capacitance (NTE175 Only) Cob fT IC = 200mA, VCE = 10V, ftest = 5MHz, Note 3 VCB = 10V, IE = 0, f = 1MHz 20 15 - - - - - - 120 MHz MHz pF VBE(on) VBE(sat) IC = 1A, IB = 125mA IC = 1A, IB = 100mA IC = 1A, VCE = 10V VCE(sat) IC = 1A, IB = 125mA 10 40 8 25 - - - - - - - - - - - - - - 100 - 80 100 2.0 0.75 1.4 1.4 1.4 V V V V V VEB = 6V, IC = 0 350 300 400 375 6 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 5 0.5 5.0 0.5 5.0 0.5 5.0 1.0 3.0 0.5 V V V V V mA mA mA mA mA mA mA mA mA mA Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 3. fT = |hfe| ftest Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Second Breakdown Second Breakdown Collector Current NTE38 NTE175 Switching Characteristics NTE38 Rise Time Storage Time Fall Time NTE175 Rise Time Storage Time Fall Time tr ts tf tr ts tf VCC = 200V, IC = 1A IB1 = 100mA, RL = 200 IB1 = IB2 = 100mA VCC = 200V, IC = 1A IB1 = IB2 = 125mA - - - - - - - - - - - - 0.6 2.5 0.6 3.0 4.0 3.0 s s s s s s IS/b t = 1s (Non-Repetitive), VCE = 40V VCE = 100V 875 350 - - - - mA mA Symbol Test Conditions Min Typ Max Unit .485 (12.3) Dia .295 (7.5) .062 (1.57) .031 (0.78) Dia .360 (9.14) Min Base .960 (24.3) .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Collector/Case Emitter |
Price & Availability of NTE38
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |